a p5521gh-hf advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 100v good thermal performance r ds(on) 150m fast switching performance i d 3.1a rohs compliant & halogen-free p-ch bv dss -100v r ds(on) 155m description i d -3.2a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 100 -100 v v gs gate-source voltage + 20 + 20 v i d @t a =25 continuous drain current 3 3.1 -3.2 a i d @t a =70 continuous drain current 3 2.5 -2.5 a i dm pulsed drain current 1 12 -12 a p d @t a =25 total power dissipation w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-c maximum thermal resistance, junction-case 6 /w rthj-a maximum thermal resistance, junction-ambient 3 40 /w data and specifications subject to change without notice 201004222 1 parameter thermal data 3.13 halogen-free product g2 d2 s2 g1 d1 s1 s1 to-252-4l g1 s2 g2 d1/d2 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v v gs =10v, i d =2a - - 150 m v gs =5v, i d =1a - - 250 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =2a - 2.8 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =2a - 10 16 nc q gs gate-source charge v ds =80v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 4 - nc t d(on) turn-on delay time 2 v ds =50v - 6.5 - ns t r rise time i d =2a - 7 - ns t d(off) turn-off delay time r g =3.3 -14- ns t f fall time v gs =10v - 3.5 - ns c iss input capacitance v gs =0v - 420 672 pf c oss output capacitance v ds =25v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.4a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =2a, v gs =0v - 40 - ns q rr reverse recovery charge di/dt=100a/s - 75 - nc 2 AP5521GH-HF n-ch electrical characteristics@ t j =25 o c(unless otherwise specified) r ds(on) static drain-source on-resistance 2
AP5521GH-HF symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -100 - - v v gs =-10v, i d =-2a - - 155 m v gs =-5v, i d =-1a - - 250 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-2a - 8.5 - s i dss drain-source leakage current v ds =-80v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-2a - 29 46 nc q gs gate-source charge v ds =-80v - 3 - nc q gd gate-drain ("miller") charge v gs =-10v - 9 - nc t d(on) turn-on delay time 2 v ds =-50v - 9 - ns t r rise time i d =-2a - 6 - ns t d(off) turn-off delay time r g =3.3 -49- ns t f fall time v gs =-10v - 22 - ns c iss input capacitance v gs =0v - 1400 2240 pf c oss output capacitance v ds =-25v - 110 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.4a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-2a, v gs =0v - 39 - ns q rr reverse recovery charge di/dt=-100a/s - 73 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test. 3.n-ch , p-ch are same , mounted on 2oz fr4 board t Q 10s. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 p-ch electrical characteristics@t j =25 o c(unless otherwise specified) r ds(on) static drain-source on-resistance 2
AP5521GH-HF n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 10 12 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 100 120 140 160 180 200 220 45678910 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =1a t a =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =2a v g =10v
AP5521GH-HF n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 5 q v g 10v q gs q gd q g charge 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2a v ds =80v 0 100 200 300 400 500 600 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
AP5521GH-HF p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 4 8 12 16 20 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -8.0v -7.0v -6.0v v g = -5.0v 110 120 130 140 150 160 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d = -1 a t a =25 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 2 4 6 8 10 12 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -8.0v -7.0v -6.0v v g = -5.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -2a v g = -10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
AP5521GH-HF p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-2a v ds = -80 v 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc q v g -10v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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